| PART |
Description |
Maker |
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| CY7C1339G-133AXC CY7C1339G-133BGXI CY7C1339G-166BG |
4-Mbit (128K x 32) Pipelined Sync SRAM
|
Cypress Semiconductor
|
| CY7C1339G CY7C1339G-250BGXI CY7C1339G-133AXC CY7C1 |
4-Mbit (128K x 32) Pipelined Sync SRAM
4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM
|
CYPRESS[Cypress Semiconductor]
|
| IDT70V9099L12PF IDT70V9099L12PFI IDT70V9199L9PFI I |
From old datasheet system
128K x 9 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
128K x 8 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 128K x9/x8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 高.3 128Kx9/x8同步流水线双端口静态RAM
Small Signal Diode 高.3 128Kx9/x8同步流水线双端口静态RAM
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
|
| IS61VPS12836A-250TQ IS61VPS12836A-250B3 IS61VPS128 |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
|
http://
Integrated Silicon Solu...
|
| CY7C1334H-133AXC CY7C1334H-133AXI CY7C1334H-166AXC |
2-Mbit (64K x 32) Pipelined SRAM with NoBL?/a> Architecture
2-Mbit (64K x 32) Pipelined SRAM with NoBLArchitecture
2-Mbit (64K x 32) Pipelined SRAM with NoBL Architecture
2-Mbit (64K x 32) Pipelined SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor Corp.
|
| CY7C1302DV25-167BZC CY7C1302DV25-167BZI CY7C1302DV |
9-Mbit Burst of Two Pipelined SRAMs with QDR Architecture
9-Mbit Burst of Two Pipelined SRAMs with QDR垄芒 Architecture
9-Mbit Burst of Two Pipelined SRAMs with QDR⑩ Architecture
|
Cypress Semiconductor
|
| CY7C1386F-167BGXC CY7C1386F-167BGXI CY7C1386F-200B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| IDT71V546S117PFI IDT71V546S117PF IDT71V546S133PF 7 |
3.3V 128K x 36 ZBT Synchronous PipeLined SRAM
128K x 36 3.3V Synchronous SRAM with ZBT Feature Burst Counter and Pipelined Outputs
128K x 36/ 3.3V Synchronous SRAM with ZBT Feature/ Burst Counter and Pipelined Outputs
From old datasheet system
128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs
|
IDT[Integrated Device Technology]
|
